The charge pump is dimensioned to load a capacitor ccp of 33 nf in less than 20 ms up to 8v above vs.
High side mosfet driver with charge pump.
It contains a completely self contained charge pump to fully enhance an n channel mosfet switch with no external components when the internal drain comparator senses that the switch current has exceeded the preset leve.
The ltc1154 single high side gate driver allows using low cost n channel fets for high side switching applications.
Its 3 high side and 3 low side output stages are powerful enough to drive mosfets with a gate charge of 400 nc with rise and fall times of approximately 150 ns.
The mic5019 is a high side mosfet driver with integrated charge pump designed to switch an n channel enhancement type mosfet control signal in high side or low side applications.
The device consumes a low 77µa of.
The ltc 7001 is a fast high side n channel mosfet gate driver that operates from input voltages up to 135v.
This simple inexpensive charge pump circuit overcomes the maximum on time limitation of the bootstrap circuit.
Its powerful driver can easily drive large gate capacitances with very short transition times making it.
The tle7183qu is designed for a 12 v power net.
An external n channel mos driver in high side configuration needs a gate driving voltage higher than vs.
It is generated by means of a charge pump with integrated charge transfer capacitors and one external charge storage capacitor c cp.
The mic5021 can also operate as a circuit breaker with or without automatic retry.
The ltc7001 is a fast high side n channel mosfet gate driver that operates from input voltages up to 135v.
The lt1910 is a high side gate driver that allows the use of low cost n channel power mosfets for high side switching applications.
Typical applications are cooling fan water pump electrohydraulic and electric power steering.
Micropower operation with 8µa standby current and 85µa operating current allows use.
The circuit presented above utilizes the advantages of the boot strap and charge pump technique providing excellent switch ing speed and steady state operation allowing the use of an n channel mos gated power device as a high side switch.
It contains an internal charge pump that fully enhances an external n channel mosfet switch allowing it to remain on indefinitely.
The mic5021 high side mosfet driver is designed to operate at frequencies up to 100 khz 5 khz pwm for 2 to 100 duty cycle and is an ideal choice for high speed applications such as motor control smps switch mode power supplies and applications using igbts.
An internal micropower regulator and charge pump generate the high side drive output voltage while requiring no external components.
An internal charge pump boosts the gate drive voltage above the positive rail fully enhancing an n channel mos switch with no external components.
